| PART |
Description |
Maker |
| K4H1G0438M-UC/LA2 K4H1G0838M-UC/LA2 K4H1G0838M-UC/ |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
0603 18 OHM 1/16W
RESISTOR, 1K, 1%, SMT 0603
1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TA1331A |
SAW Filter 902.875 MHz
|
TAI-SAW TECHNOLOGY CO.,...
|
| TSHA4400AS12 TSHA4400AS12Z |
3 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY TELEFUNKEN
TEMIC SEMICONDUCTORS
|
| TSHA6500 TSHA650009 |
Infrared Emitting Diode, 875 nm, GaAlAs
|
Vishay Siliconix
|
| RO2043 |
Designed for 303.875 MHz SAW Resonator 专为303.875兆赫表面波谐振器
|
RF Monolithics, Inc.
|
| 0875AS43A1850 |
875 MHz SPT4 GSM Antenna Switch Module
|
Johanson Technology Inc.
|
| TSTA7100 TSTA710008 |
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
|
Vishay Siliconix
|
| TSHA6500 TSHA6501 TSHA6502 TSHA6503 |
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
|
Vishay Siliconix
|
| 1301800308 |
1 1/4 Cord Grip Grommet, F5 Body Size 19.05-22.23mm (.750-.875) Cord Diameter
|
Molex Electronics Ltd.
|
|
